Dielectric composition and electronic component

ABSTRACT

Provided is a dielectric composition containing: a main component expressed by {Ba x Sr (1-x) } m Ta 4 O 12 ; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and magnesium. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO 2 , and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO.

The present application claims a priority on the basis of Japanesepatent application No. 2022-016587 filed on Feb. 4, 2022, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present invention relates to a dielectric composition and anelectronic component.

BACKGROUND

For example, as disclosed in JP 2000-103671 A, a dielectric compositionhaving a high specific dielectric constant without containing lead or analkali metal has been developed.

However, a novel dielectric composition that is being newly developedhas a problem that a high-density dielectric substance is not obtainedwhen not being fired at a high temperature.

SUMMARY

The present invention has been made in consideration such circumstances,and an object thereof is to provide a novel dielectric composition inwhich a high sintering density is obtained even w % ben being fired at arelatively low temperature, and a specific dielectric constant is high.

According to an aspect of the present invention, there is provided adielectric composition comprising: a main component expressed by{Ba_(x)Sr_((1-x))}_(m)Ta₄O₁₂; and a first subcomponent,

wherein m satisfies a relationship of 1.95≤m≤2.40,

the first subcomponent includes silicon and magnesium,

the amount of silicon contained in the dielectric composition is 7.5 to15.0 parts by mole in terms of SiO₂, and

the amount of magnesium contained in the dielectric composition is 5.0to 22.5 parts by mole in terms of MgO,

provided that the amount of the main component contained in thedielectric composition is set to 100 parts by mole.

The dielectric composition according to the aspect of the presentinvention has a high sintering density and a high specific dielectricconstant even when being fired at a relatively low temperature. Thereason for this is not necessarily certain, but the following reason isconsidered. When m is within the above-described range, and apredetermined amount of silicon and magnesium is contained in thedielectric composition, it is considered that an operation of lowering asintering initiation temperature is obtained. According to this, it isconsidered that even when being fired at a relatively low temperature,the high sintering density is easily obtained, and the specificdielectric constant is also improved.

It is preferable that m satisfies a relationship of 2.10≤m≤2.40.According to this, it is considered that an effect of improvingwettability between the main component and the first subcomponent andlowering the sintering initiation temperature is obtained. According tothis, even at a low temperature, a higher sintering density is obtainedand the specific dielectric constant is further improved.

Preferably, the dielectric composition further comprises at least oneselected from the group consisting of manganese and at least one ofrare-earth elements as a second subcomponent,

the at least one selected from the group consisting of manganese and theat least one of rare-earth elements satisfies a predetermined amount interms of a predetermined oxide in the dielectric composition, andwherein

the predetermined amount of manganese contained in the dielectriccomposition is 0.5 to 7.0 parts by mole in terms of MnO, and/or

the predetermined amount of the at least one of rare-earth elementsexpressed by RE and contained in the dielectric composition is 0.5 to5.0 parts by mole in terms of RE₂O₃,

provided that the amount of the main component contained in thedielectric composition is set to 100 parts by mole.

When the second subcomponent is contained in the dielectric compositionwithin the above-described range, the sintering initiation temperatureis further lowered. According to this, the sintering density is furtherimproved, and the specific dielectric constant is further improved. Inaddition, when the second subcomponent is contained in the dielectriccomposition within the above-described range, an effect of improvingresistance to reduction is obtained. As a result, a specific resistanceis further improved.

Preferably, the dielectric composition further contains at least oneselected from the group consisting of titanium, hafnium, niobium, andmolybdenum as a third subcomponent,

the at least one selected from the group consisting of titanium,hafnium, niobium, and molybdenum is contained in the dielectriccomposition in an amount of 0.25 to 1.0 parts by mole in terms of apredetermined oxide,

provided that the amount of the main component contained in thedielectric composition is set to 100 parts by mole,

the amount of titanium is an amount in terms of TiO₂,

the amount of hafnium is an amount in terms of HfO₂,

the amount of niobium is an amount in terms of Nb₂O₅, and

the amount of molybdenum is an amount in terms of MoO₃.

When the third subcomponent is contained in the dielectric compositionwithin the above-described range, the specific dielectric constant isfurther improved.

It is preferable that the dielectric composition according to thepresent invention substantially does not contain alkali metal and lead.

Examples of the dielectric composition that exhibits a high specificdielectric constant include (Na, K)NbO₃ including an alkali metal, andPb(Zr, Ti)O₃ including lead.

In addition, since the dielectric composition according to the presentinvention substantially does not contain an alkali metal, it is possibleto prevent a composition deviation of the dielectric composition andcontamination of a furnace due to evaporation of the alkali metal.

Furthermore, although the use of lead is regulated by restriction ofhazardous substances directive (RoHS), and the like, the dielectriccomposition according to the present invention substantially does notcontain lead.

In addition, an electric component according to the present inventionincludes the above-described dielectric composition.

BRIEF DESCRIPTION OF THE DRAWING(S)

FIG. 1 is a schematic cross-sectional view of a multilayer ceramiccapacitor according to an embodiment of the present invention; and

FIG. 2 is a schematic cross-sectional view of a thin film capacitoraccording to an embodiment of the present invention.

DETAILED DESCRIPTION First Embodiment

<Multilayer Ceramic Capacitor>

A multilayer ceramic capacitor 1 as an example of an electroniccomponent according to an embodiment is illustrated in FIG. 1 . Themultilayer ceramic capacitor 1 includes an element body 10 in which adielectric layer 2 and an inner electrode layer 3 are alternatelystacked. A pair of outer electrodes 4 electrically connected to aplurality of the inner electrode layers 3 arranged alternately at theinside of the element body 10 are formed at both ends of the elementbody 10. Although a shape of the element body 10 is not particularlylimited, the shape is typically set to a rectangular parallelepipedshape. In addition, dimensions of the element body 10 are notparticularly limited, and may be set to appropriate dimensions incorrespondence with applications.

<Dielectric Layer>

The dielectric layer 2 is formed from a dielectric composition accordingto this embodiment to be described later.

The thickness (interlayer thickness) of the dielectric layer 2 per onelayer is not particularly limited, and can be set in correspondence withdesired characteristics, applications, or the like. Typically, theinterlayer thickness is preferably 30 μm or less, more preferably 15 μmor less, and still more preferably 10 μm or less.

<Inner Electrode Layer>

In this embodiment, the inner electrode layer 3 is staked so thatrespective ends are alternately exposed to two opposite end surfaces ofthe element body 10.

A conductive material contained in the inner electrode layer 3 is notparticularly limited. Examples of a metal that is used as the conductivematerial include palladium, platinum, a silver-palladium alloy, nickel,a nickel-based alloy, copper, a copper-based alloy, and the like. Notethat, various minor components such as phosphor and/or sulfur may becontained in nickel, the nickel-based alloy, copper, or the copper-basedalloy in an amount of approximately 0.1% by mass or less. In addition,the inner electrode layer 3 can be formed by using commerciallyavailable paste for electrodes. The thickness of the inner electrodelayer 3 may be appropriately determined in correspondence withapplications or the like.

<Outer Electrode>

A conductive material contained in each of the outer electrodes 4 is notparticularly limited. For example, known conductive materials such asnickel, copper, tin, silver, palladium, platinum, gold, alloys thereof,or a conductive resin may be used. The thickness of the outer electrode4 may be appropriately determined in correspondence with applications orthe like.

<Dielectric Composition>

The dielectric composition that constitutes the dielectric layer 2according to this embodiment contains at least one of barium andstrontium, and tantalum as a main component.

The main component of the dielectric composition according to thisembodiment preferably includes strontium, and more preferably bothstrontium and barium.

The main component of the dielectric composition according to thisembodiment is expressed by {Ba_(x)Sr_((1-x))}_(m)Ta₄O₂.

x is preferably 0.75 or less, more preferably less than 0.75, and stillmore preferably 0.1 to 0.50.

m preferably satisfies a relationship of 1.95≤m≤2.40, and morepreferably 2.10≤m≤2.40.

Although a crystal system of a crystal of the main component in thedielectric composition according to this embodiment is not particularlylimited, the crystal is preferably a tetragonal system or anorthorhombic system, and more preferably the tetragonal system.

Note that, in this embodiment, when the amount of elements contained inthe dielectric composition other than oxygen is set to 100 parts bymole, the elements constituting the main component other than oxygenoccupy 70 to 99.5 parts by mole.

In addition, the dielectric composition according to this embodimentsubstantially does not contain an alkali metal, and lead. Description of“substantially does not contain an alkali metal, and lead” representsthat when the amount of elements contained in the dielectric compositionother than oxygen is set to 100 parts by mole, the sum of “an alkalimetal, and lead” is 10 parts by mole or less, and preferably 5 parts bymole or less.

The dielectric composition according to this embodiment contains siliconand magnesium as a first subcomponent.

When the amount of the main component contained in the dielectriccomposition is set to 100 parts by mole, the amount of silicon containedin the dielectric composition is 7.5 to 15.0 parts by mole in terms ofSiO₂, and preferably 10.0 to 13.5 parts by mole.

That is, the amount of silicon contained is obtained in terms of anoxide when the valence of silicon is tetravalent.

When the amount of the main component contained in the dielectriccomposition is set to 100 parts by mole, the amount of magnesiumcontained in the dielectric composition is 5.0 to 22.5 parts by mole interms of MgO, and preferably 7.0 to 12.5 parts by mole. That is, theamount of magnesium contained is obtained in terms of an oxide when thevalence of magnesium is divalent.

The dielectric composition according to this embodiment preferablycontain at least one selected from the group consisting of manganese anda rare-earth element as a second subcomponent.

When the amount of the main component contained in the dielectriccomposition is set to 100 parts by mole, the amount of manganesecontained in the dielectric composition is 0.5 to 7.0 parts by mole interms of MnO. That is, the amount of manganese contained is obtained interms of an oxide when the valence of manganese is divalent.

The rare-earth element is expressed by “RE”. When the amount of the maincomponent contained in the dielectric composition is set to 100 parts bymole, the amount of the rare-earth element (RE) contained is 0.5 to 5.0parts by mole in terms of RE₂O₃. That is, the amount of the rare-earthelement contained is obtained in terms of an oxide when the valence ofthe rare-earth element is trivalent.

The dielectric composition according to this embodiment preferablycontains at least one selected from the group consisting of titanium,hafnium, niobium, and molybdenum as a third subcomponent.

Specifically, when the amount of the main component contained in thedielectric composition is set to 100 parts by mole, at least oneselected from the group consisting of titanium, hafnium, niobium, andmolybdenum is preferably contained in the dielectric composition in anamount of 0.25 to 1.0 parts by mole in terms of a predetermined oxide.

The amount of titanium contained is an amount in terms of TiO₂. That is,the amount of titanium contained is obtained in terms of an oxide whenthe valence of titanium is tetravalent.

The amount of hafnium contained is an amount in terms of HfO₂. That is,the amount of hafnium contained is obtained in terms of an oxide whenthe valence of hafnium is tetravalent.

The amount of niobium contained is an amount in terms of Nb₂O₅. That is,the amount of niobium contained is obtained in terms of an oxide whenthe valence of niobium is pentavalent.

The amount of molybdenum contained is an amount in terms of MoO₃. Thatis, the amount of molybdenum contained is obtained in terms of an oxidewhen the valence of molybdenum is hexavalent.

The dielectric composition according to this embodiment may containaluminum, calcium, chromium, vanadium, zirconium, tungsten, and the likein addition to the above main component, the first subcomponent, thesecond subcomponent, and the third subcomponent.

<Method of Manufacturing Multilayer Ceramic Capacitor>

Next, description will be given of an example of a method ofmanufacturing the multilayer ceramic capacitor 1 illustrated in FIG. 1 .

In this embodiment, a powder of the main component that constitutes thedielectric composition, and powders of the first subcomponent, thesecond subcomponent, and the third subcomponent are prepared,respectively. Although a method preparing the powder of the maincomponent is not particularly limited, the powder can be prepared by asolid phase reaction method such as calcination. Raw materials ofrespective elements which constitute the powder of the main component,and the powders of the first subcomponent, the second subcomponent, andthe third subcomponent are not particularly limited, and oxides of therespective elements can be used. In addition, various kinds of compoundsfrom which oxides of the respective elements can be obtained by firingcan be used.

Raw materials of the powder of the main component, and the powders ofthe first subcomponent, the second subcomponent, and the thirdsubcomponent are weighed in a predetermined ratio, and wet mixing isperformed for predetermined time by using a ball mill, or the like. Theresultant mixed powder is dried and subjected to a heat treatment in arange of 700° C. to 1300° C. in the air to obtain a calcined powder ofthe main component, the first subcomponent, the second subcomponent, andthe third subcomponent. In addition, the calcined powder may bepulverized for predetermined time by using a ball mill, or the like.

Next, paste for manufacturing a green chip is prepared. The obtainedcalcined powder and a solvent are kneaded to form a paint, therebypreparing paste for the dielectric layer. Known binder and the solventmay be used.

The paste for the dielectric layer may contain an additive such as aplasticizer and a dispersant as necessary.

A paste for the inner electrode layer is obtained by kneading a rawmaterial of the above-described conductive material, a binder, and asolvent. Known binder and solvent may be used. The paste for the innerelectrode layer may contain an additive such as an inhibitor and aplasticizer as necessary.

A paste for the outer electrode can be prepared in the same manner as inthe paste for the inner electrode layer.

A green sheet and an inner electrode pattern are formed by using theobtained pastes, and the green sheet and the inner electrode pattern arestacked to obtain a green chip.

The obtained green chip is subjected to a binder removal treatment asnecessary. As binder removal treatment conditions, for example, aholding temperature is preferably set to 200° C. to 350° C.

After the binder removal treatment, the green chip is fired to obtainthe element body 10. In this embodiment, a firing atmosphere is notparticularly limited, and firing may be performed in the air or areducing atmosphere. In this embodiment, the holding temperature at thetime of firing is, for example, 1150° C. to 1250° C.

After the firing, the obtained element body 10 is subjected to areoxidation treatment (annealing) as necessary. As annealing conditions,for example, an oxygen partial pressure at the time of annealing ispreferably set to an oxygen partial pressure higher than an oxygenpartial pressure at the timing of firing, and a holding temperature ispreferably set to 1150° C. or lower.

A dielectric composition that constitutes the dielectric layer 2 of theelement body 10 obtained as described above is the above-describeddielectric composition. The element body 10 is subjected to end surfacepolishing, the paste for the outer electrode is applied and ispreliminarily fired to form the outer electrode 4. Then, a coating layeris formed on a surface of the outer electrode 4 by plating or the likeas necessary.

As described above, the multilayer ceramic capacitor 1 according to thisembodiment is manufactured.

The dielectric composition according to this embodiment contains{Ba_(x)Sr_((1-x))}_(m)Ta₄O₁₂ as the main component, m is within apredetermined range, and the dielectric composition contains apredetermined amount of silicon and magnesium as the first subcomponent.According to this, it is possible to obtain a dielectric compositionhaving a high sintering density and a high specific dielectric constanteven when the dielectric composition is sintered by firing thedielectric composition at a relatively low temperature.

The reason for this is not necessarily certain, but the following reasonis considered. When m is within the above-described range, and apredetermined amount of silicon and magnesium is contained in thedielectric composition, it is considered that an operation of lowering asintering initiation temperature is obtained. According to this, it isconsidered that even when being fired at a relatively low temperature,the high sintering density is easily obtained, and the specificdielectric constant is also improved.

In addition, according to this embodiment, it is possible to obtain adielectric composition that substantially does not contain an alkalimetal and lead, and exhibits a high density, a high specific dielectricconstant, a low dielectric loss, and a high specific resistance.

Second Embodiment

<Thin Film Capacitor>

A schematic view of a thin film capacitor 11 according to thisembodiment is shown in FIG. 2 . In the thin film capacitor 11illustrated in FIG. 2 , a lower electrode 112 and a dielectric thin film113 are formed on a substrate 111 in this order, and an upper electrode114 is provided on a surface of the dielectric thin film 113.

Although a material of the substrate 111 is not particularly limited,when using a silicon single crystal substrate is used as the substrate111, availability and cost are excellent. When flexibility isemphasized, nickel foil or copper foil can also be used as thesubstrate.

A material of the lower electrode 112 and the upper electrode 114 is notparticularly limited, and the material may function as an electrode.Examples of the material include platinum, silver, nickel, and the like.The thickness of the lower electrode 112 is not particularly limited,and the thickness is, for example, 0.01 to 10 μm. The thickness of theupper electrode 114 is not particularly limited, and the thickness is,for example, 0.01 to 10 μm.

A composition of a dielectric composition that constitutes thedielectric thin film 113 and a crystal system of a main componentaccording to this embodiment are similar as in the first embodiment.

Although the thickness of the dielectric thin film 113 is notparticularly limited, but the thickness is preferably 10 nm to 1 μm.

<Method of Manufacturing Thin Film Capacitor>

Next, a method of manufacturing the thin film capacitor 11 will bedescribed.

There is no particular limitation to a film formation method of a thinfilm that finally becomes the dielectric thin film 113. Examples of themethod include a vacuum deposition method, a sputtering method, a pulsedlaser deposition method (PLD method), a metalorganic chemical vapordeposition method (MO-CVD method), a metalorganic decomposition method(MOD method), a sol-gel method, a chemical solution deposition method(CSD method), and the like.

In addition, a minute impurity or subcomponent may be contained in a rawmaterial that is used in film formation, but there is no particularproblem as long as the impurity or the subcomponent is contained in anamount that does not greatly damage the performance of the thin film. Inaddition, the dielectric thin film 113 according to this embodiment maycontain minute impurities or subcomponents in an amount that does notgreatly damage the performance.

In this embodiment, a film formation method by the PLD method will bedescribed.

First, a silicon single crystal substrate is prepared as the substrate111. Next, films of SiO₂, TiO_(x), and platinum are sequentially formedon the silicon single crystal substrate, and the lower electrode 112formed from platinum is formed. A method of forming the lower electrode112 is not particularly limited. Examples of the method include asputtering method, a CVD method, and the like.

Next, the dielectric thin film 113 is formed on the lower electrode 112by the PLD method. In addition, a region where a thin film is notpartially formed may be formed by using a metal mask so as to expose apart of the lower electrode 112.

In the PLD method, first, a target containing a constituent element ofthe dielectric thin film 113 that is desired is provided in a filmformation chamber. Next, a surface of the target is irradiated with apulsed laser. The surface of the target instantly vaporizes due tostrong energy of the pulsed laser. Then, an evaporated material isdeposited on the substrate disposed to face the target to form thedielectric thin film 113.

The type of the target is not particularly limited, and in addition to ametal oxide sintered body containing the constituent element of thedielectric thin film 113 to be manufactured, an alloy or the like can beused. In addition, it is preferable that respective elements are evenlydistributed in the target, but a variation may exist in the distributionwithin a range having no influence on the quality of the dielectric thinfilm 113 to be obtained.

It is not necessary for the target to be one piece, and a plurality oftargets containing parts of the constituent elements of the dielectricthin film 113 may be prepared to be used in film formation. A shape ofthe target is not limited, and the shape may be set to a shape suitablefor a film formation device that is used.

In addition, in the PLD method, it is preferable to heat the substrateIII with an infrared laser at the timing of film formation so as tocrystallize the dielectric thin film 113 that is formed. A heatingtemperature of the substrate 111 varies in accordance with constituentelements, and the composition, and the like of the dielectric thin film113 and the substrate 111, but the film formation is performed byheating the substrate 111 to be, for example, 600° C. to 800° C. Whenthe temperature of the substrate 111 is set to an appropriatetemperature, the dielectric thin film 113 is likely to be crystallizedand occurrence of cracks during cooling can be prevented.

Finally, the upper electrode 114 is formed on the dielectric thin film113, thereby manufacturing the thin film capacitor 11. Note that, amaterial of the upper electrode 114 is not particularly limited, andsilver, gold, copper, or the like can be used. In addition, there is noparticular limitation to a method of forming the upper electrode 114.For example, the upper electrode 114 can be formed by deposition, or asputtering method.

Hereinbefore, the embodiment of the present invention has beendescribed, but the present invention is not limited to the embodimentand the like, and it should be understood that the present invention canbe executed in various different aspects within a range not departingfrom the gist of the present invention.

In the above-described embodiments, description has been given of a casewhere the electronic component according to the present invention is amultilayer ceramic capacitor, but the electronic component according tothe present invention is not limited to the multilayer ceramiccapacitor, and may be any electronic component including theabove-described dielectric composition.

For example, the above-described electronic component may be a singleplate type ceramic capacitor in which a pair of electrodes is formed ona single-layer dielectric substrates formed from the dielectriccomposition.

In addition, the electronic component according to the present inventionmay be a filter, a diplexer, a resonator, an oscillator, an antenna, orthe like in addition to the capacitor.

Examples

Hereinafter, the present invention will be described in more detail withreference to examples and comparative examples. However, the presentinvention is not limited to the following examples.

Powders of barium carbonate (BaCO₃), strontium carbonate (SrCO₃), andtantalum oxide (Ta₂O₅) were prepared as starting raw materials of themain component of the dielectric composition. The prepared starting rawmaterials of the main component were weighed so that x in thecomposition of the main component expressed by{Ba_(x)Sr_((1-x))}_(m)Ta₄O₂ becomes 0.5 in Table 1 and Table 2, andbecomes as described in Table 3, and m becomes as described in Table 1to Table 3.

In addition, respective raw material powders were prepared as startingraw materials of the first subcomponent, the second subcomponent, andthe third subcomponent of the dielectric composition, and the preparedstarting raw materials of the first subcomponent, the secondsubcomponent, and the third subcomponent were weighed so that theamounts of the first subcomponent, the second subcomponent, and thethird subcomponent after firing become as described in Table 1 to Table3. Note that, “the amounts of the first subcomponent, the secondsubcomponent, and the third subcomponent” are “amounts of the firstsubcomponent, the second subcomponent, and the third subcomponentcontained in the dielectric composition in terms a predetermined oxidewhen the amount of the main component contained in the dielectriccomposition is set to 100 parts by mole”.

Next, the respective weighed powders were wet-mixed with a ball mill byusing an ion exchanged water as a dispersion medium, and the resultantmixture was dried to obtain a mixed raw material powder. Then, theobtained mixed raw material powder was subject to a heat treatment inthe air under conditions of a holding temperature of 900° C. and holdingtime of two hours to obtain a calcined powder.

The obtained calcined powder was wet-pulverized with a ball mill byusing an ion exchanged water as a dispersion medium and was dried toobtain a dielectric raw material.

10 parts by mass of aqueous solution containing 6 parts by mass ofpolyvinyl alcohol resin as a binder was added to 100 parts by mass ofdielectric raw material obtained, and the resultant mixture wasgranulated to obtain a granulated powder.

The obtained granulated powder was put into a mold having a diameter ϕof 12 mm, was subjected to temporary press-molding at a pressure of 0.6ton/cm², and was subjected to main press-molding at a pressure of 1.2ton/cm² to obtain a disc-shaped green molded body.

Next, the obtained green molded body was subjected to a binder removaltreatment, firing, and annealing under the following conditions toobtain an element body.

Binder removal treatment conditions were set as follows. That is, aholding temperature was set to 400° C., temperature holding time was setto two hours, and an atmosphere was set to the air.

As firing conditions, a holding temperature was set to 1250° C.,temperature holding time was set to two hours, and an atmosphere was setto a humidified N₂+H₂ mixed gas (an oxygen partial pressure: 10⁻¹² MPa).Note that, a wetter was used to humidify the atmospheric gas duringfiring.

As annealing conditions, a holding temperature was set to 1050° C.,temperature holding time was set to two hours, and an atmospheric gaswas set to a humidified N₂ gas (an oxygen partial pressure: 10⁻⁷ MPa).Note that, a wetter was used to humidify the atmospheric gas duringannealing.

A sintering density, a specific dielectric constant, and a specificresistance of the obtained sintered body (dielectric composition) wereinvestigated by the following method. Note that, in order to measure thespecific dielectric constant and the specific resistance, an In—Gaelectrode is applied to the dielectric composition (sintered body),thereby obtaining a disc-shaped ceramic capacitor sample (capacitorsample).

<Sintering Density>

The sintering density of the dielectric composition was measured asfollows. First, a volume V of the dielectric composition was calculated.Next, a mass M of the disc-shaped dielectric composition was measured,and MN was calculated to obtain the sintering density of the dielectriccomposition. Results are shown in Table 1 to Table 3.

<Specific Dielectric Constant>

A signal having a frequency of 1 kHz and an input signal level(measurement voltage) of 1 V/rms was input to the capacitor sample atroom temperature (20° C.) by using a digital LCR meter (4284A,manufactured by YHP) to measure electrostatic capacitance C. Then, thespecific dielectric constant was calculated on the basis of thethickness of the dielectric composition, an effective electrode area,and the electrostatic capacitance C obtained as a result of measurement.Results are shown in Table 1 to Table 3.

<Specific Resistance>

An insulation resistance of the capacitor sample was measured at areference temperature (25° C.) by using a digital resistance meter(R8340, manufactured by ADVANTEST CORPORATION). The specific resistancewas calculated from the obtained insulation resistance, the effectiveelectrode area, and the thickness of the dielectric composition. Resultsare shown in Table 1 to Table 3.

TABLE 1 Amount of first Amount of second subcomponent subcomponentAmount of third subcomponent contained contained contained Si Mg Mn RETi Hf Nb Mo Specific In terms In terms In terms In terms In terms Interms In terms In terms Sintering dielectric Specific Sample of SIO2 ofMgO of Mno of RE₂O₂ of TIO₂ of HfO₂ of Nb₂O₅ of MoO₃ density constantresistance No. m (mol) (mol) (mol) (mol) (mol) (mol) (mol) (mol) (g/cm³)(—) (Ω · m) 1 1.90 5.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 3.89 488.4E+09 2 1.90 5.00 2.50 0.00 0.00 0.00 0.00 0.00 0.00 4.87 50 1.2E+10 31.90 8.50 6.50 0.00 0.00 0.00 0.00 0.00 0.00 5.54 62 2.3E+10 4 1.9015.00 10.00 0.00 0.00 0.00 0.00 0.00 0.00 6.21 64 8.1E+10 5 1.95 8.506.50 0.00 0.00 0.00 0.00 0.00 0.00 6.60 78 1.8E+11 6 2.00 8.50 6.50 0.000.00 0.00 0.00 0.00 0.00 6.70 80 3.5E+11 7 2.05 8.50 6.50 0.00 0.00 0.000.00 0.00 0.00 6.79 82 3.3E+11 8 2.10 8.50 6.50 0.00 0.00 0.00 0.00 0.000.00 7.10 108 6.0E+11 9 2.20 8.50 6.50 0.00 0.00 0.00 0.00 0.00 0.007.07 106 7.1E+11 10 2.30 8.50 6.50 0.00 0.00 0.00 0.00 0.00 0.00 7.10109 6.5E+11 11 2.40 8.50 6.50 0.00 0.00 0.00 0.00 0.00 0.00 7.08 1055.3E+11 12 2.45 8.50 6.50 0.00 0.00 0.00 0.00 0.00 0.00 6.70 65 7.7E+1113 2.50 13.50 12.50 0.00 0.00 0.00 0.00 0.00 0.00 6.90 60 9.2E+11 142.05 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 3.65 38 2.0E+09 15 2.055.00 5.00 0.00 0.00 0.00 0.00 0.00 0.00 4.90 54 1.4E+10 16 2.05 7.505.00 0.00 0.00 0.00 0.00 0.00 0.00 6.63 79 1.9E+11 17 2.05 10.00 5.000.00 0.00 0.00 0.00 0.00 0.00 6.82 85 3.1E+11 18 2.05 11.00 5.00 0.000.00 0.00 0.00 0.00 0.00 6.84 87 3.3E+11 19 2.05 12.50 5.00 0.00 0.000.00 0.00 0.00 0.00 6.88 88 5.0E+11 20 2.05 13.50 5.00 0.00 0.00 0.000.00 0.00 0.00 6.90 86 3.9E+11 21 2.05 15.00 5.00 0.00 0.00 0.00 0.000.00 0.00 6.85 76 5.5E+11 22 2.05 20.00 5.00 0.00 0.00 0.00 0.00 0.000.00 6.90 66 6.3E+11 23 2.05 8.50 0.00 0.00 0.00 0.00 0.00 0.00 0.004.22 53 2.6E+10 24 2.05 8.50 2.50 0.00 0.00 0.00 0.00 0.00 0.00 6.22 589.1E+10 25 2.05 8.50 5.00 0.00 0.00 0.00 0.00 0.00 0.00 6.59 75 3.2E+1126 2.05 8.50 7.00 0.00 0.00 0.00 0.00 0.00 0.00 6.84 83 4.4E+11 27 2.058.50 10.00 0.00 0.00 0.00 0.00 0.00 0.00 6.88 86 4.2E+11 28 2.05 8.5012.50 0.00 0.00 0.00 0.00 0.00 0.00 6.88 88 5.1E+11 29 2.05 8.50 15.000.00 0.00 0.00 0.00 0.00 0.00 6.90 79 4.8E+11 30 2.05 8.50 17.50 0.000.00 0.00 0.00 0.00 0.00 6.88 76 5.1E+11 31 2.05 8.50 20.00 0.00 0.000.00 0.00 0.00 0.00 6.90 75 5.5E+11 32 2.05 8.50 22.50 0.00 0.00 0.000.00 0.00 0.00 6.88 74 6.8E+11 33 2.05 8.50 25.00 0.00 0.00 0.00 0.000.00 0.00 6.86 68 8.9E+11

TABLE 2 Amount of first Amount of second subcomponent subcomponentAmount of third subcomponent contained contained contained Si Mg Mn RETi Hf Nb Mo Specific In terms In terms In terms In terms In terms Interms In terms In terms Sintering dielectric Specific Sample of SIO2 ofMgO of Mno of RE₂O₂ of TIO₂ of HfO₂ of Nb₂O₅ of MoO₃ density constantresistance No. m (mol) (mol) (mol) (mol) (mol) (mol) (mol) (mol) (g/cm³)(—) (Ω · m) 35 2.00 13.50 7.50 0.00 0.00 0.00 0.00 0.00 0.00 6.87 884.2E+11 36 2.05 10.00 10.00 0.00 0.00 0.00 0.00 0.00 0.00 6.82 905.9E+11 37 2.10 12.50 5.00 0.00 0.00 0.00 0.00 0.00 0.00 7.09 1097.0E+11 38 2.20 13.50 12.50 0.00 0.00 0.00 0.00 0.00 0.00 7.19 1187.3E+11 39 2.30 7.50 5.00 0.00 0.00 0.00 0.00 0.00 0.00 7.10 109 6.6E+1140 2.40 15.00 12.50 0.00 0.00 0.00 0.00 0.00 0.00 7.09 107 6.5E+11 412.20 10.00 10.00 0.25 0.00 0.00 0.00 0.00 0.00 7.16 115 8.5E+11 42 2.2010.00 10.00 0.50 0.00 0.00 0.00 0.00 0.00 7.24 122 2.2E+12 43 2.20 10.0010.00 1.50 0.00 0.00 0.00 0.00 0.00 7.30 126 1.5E+12 44 2.20 10.00 10.003.00 2.50 0.00 0.00 0.00 0.00 7.32 123 2.9E+12 (Y) 45 2.20 10.00 10.005.00 1.00 0.00 0.00 0.00 0.00 7.24 128 1.8E+12 (Ho) 46 2.20 10.00 10.007.00 0.00 0.00 0.00 0.00 0.00 7.26 126 1.88+12 47 2.20 10.00 10.00 0.500.00 0.00 0.00 0.00 0.00 7.30 126 1.5E+12 48 2.20 10.00 10.00 1.50 1.000.00 0.00 0.00 0.00 7.32 125 3.5E+12 (Gd) 49 2.20 10.00 10.00 3.00 0.500.00 0.00 0.00 0.00 7.22 122 3.1E+12 (Yb) 50 2.20 10.00 10.00 5.00 0.250.00 0.00 0.00 0.00 7.28 126 2.9E+12 (Nd) 51 2.20 10.00 10.00 0.00 0.250.00 0.00 0.00 0.00 7.15 118 7.7E+11 (La) 52 2.20 10.00 10.00 1.00 3.000.00 0.00 0.00 0.00 7.22 126 2.9E+12 (Y) 53 2.20 10.00 10.00 0.50 5.000.00 0.00 0.00 0.00 7.28 121 1.8E+12 (Y) 54 2.20 10.00 10.00 0.50 0.250.00 0.00 0.00 0.00 7.23 123 1.8E+12 (Ho) 55 2.20 10.00 10.00 5.00 0.000.00 0.00 0.00 0.00 7.23 127 1.6E+12 56 2.20 10.00 10.00 5.00 2.50 1.000.00 1.00 0.00 7.24 132 2.9E+12 (Nd) 57 2.20 10.00 10.00 2.50 5.00 0.000.50 0.00 0.50 7.26 133 1.8E+12 (Yb) 58 2.20 10.00 10.00 0.00 5.00 0.500.00 0.50 0.00 7.28 135 1.8E+12 (Sm) 59 2.20 10.00 10.00 5.00 0.00 0.500.50 0.50 0.50 7.30 132 1.5E+12 60 2.20 10.00 10.00 5.00 2.50 0.00 0.500.00 0.50 7.26 137 2.9E+12 (Y) 61 2.20 10.00 10.00 2.50 5.00 0.50 0.500.50 0.50 7.32 140 2.7E+12 (Gd) 62 2.20 10.00 10.00 0.00 5.00 1.00 1.001.00 1.00 7.22 135 1.5E+12 (Dy) 63 2.20 10.00 10.00 5.00 2.50 0.25 0.250.25 0.25 7.28 132 3.5E+12 (Y)

TABLE 3 Amount of first Amount of second subcomponent subcomponentAmount of third subcomponent contained contained contained Si Mg Mn RETi Hf Nb Mo In In In In In In In In terms terms terms terms terms termsterms terms Specific of of of of of of of of Sintering dielectricSpecific Sample {Ba_(x)Sr_((1−x))}_(m)Ta₄O₁₂ SiO₂ MgO MnO RE₂O₃ TiO₂HfO₂ Nb₂O₅ MoO₃ density constant resistance No. m x (mol) (mol) (mol)(mol) (mol) (mol) (mol) (mol) (g/cm³) (—) (Ω · m) 71 2.20 0.75 11.0010.00 0.00 0.00 0.00 0.00 0.00 0.00 7.13 112 6.6E+11 72 2.20 0.50 11.0010.00 0.00 0.00 0.00 0.00 0.00 0.00 7.16 114 7.1E+11 73 2.20 0.25 11.0010.00 0.00 0.00 0.00 0.00 0.00 0.00 7.18 116 7.3E+11 74 2.20 0.10 11.0010.00 0.00 0.00 0.00 0.00 0.00 0.00 7.16 118 7.5E+11 75 2.20 0.00 11.0010.00 0.00 0.00 0.00 0.00 0.00 0.00 7.15 118 7.4E+11

From Table 1 to Table 3, it could be confirmed that in a case where m in{Ba_(x)Sr_((1-x))}_(m)Ta₄O₁₂ satisfies a relationship of 1.95≤m≤2.40,the amount of silicon contained is 7.5 to 15.0 parts by mole in terms ofSiO₂, and the amount of magnesium contained is 5.0 to 22.5 parts by molein terms of MgO (Sample Nos. 5 to 11, 16 to 21, 25 to 32, 35 to 63, and71 to 75), the sintering density is 6.50 g/cm³ or greater, the specificdielectric constant is 70 or greater, and the specific resistance is1.0×10¹¹ or greater.

From Table 1 to Table 3, it could be confirmed that in a case where m in{Ba_(x)Sr_((1-x))}_(m)Ta₄O₁₂ satisfies a relationship of 2.10≤m≤2.40,the amount of silicon contained is 7.5 to 15.0 parts by mole in terms ofSiO₂, and the amount of magnesium contained is 5.0 to 22.5 parts by molein terms of MgO (Sample Nos. 8 to 11, 37 to 63, and 71 to 75), thesintering density is 7.00 g/cm³ or greater, the specific dielectricconstant is 100 or greater, and the specific resistance is 1.0×10¹¹ orgreater.

From Table 1 to Table 3, it could be confirmed that in a case where m in{Ba_(x)Sr_((1-x))}_(m)Ta₄O₁₂ satisfies a relationship of 2.10≤m≤2.40,the amount of silicon contained is 7.5 to 15.0 parts by mole in terms ofSiO₂, the amount of magnesium contained is 5.0 to 22.5 parts by mole interms of MgO, at least one selected from the group consisting ofmanganese and a rare-earth element satisfies a predetermined amount interms of a predetermined oxide, the predetermined amount of manganesecontained is 0.5 to 7.0 parts by mole in terms of MnO, and thepredetermined amount of the rare-earth element (RE) contained is 0.5 to5.0 parts by mole in terms of RE₂O₃ (Samples Nos. 42 to 50 and 52 to63), the sintering density is 7.20 g/cm³ or greater, the specificdielectric constant is 120 or greater, and the specific resistance is1.0×10¹² or greater.

From Table 1 to Table 3, it could be confirmed that in a case where m in{Ba_(x)Sr_((1-x))}_(m)Ta₄O₁₂ satisfies a relationship of 2.10≤m≤2.40,the amount of silicon contained is 7.5 to 15.0 parts by mole in terms ofSiO₂, the amount of magnesium contained is 5.0 to 22.5 parts by mole interms of MgO, at least one selected from the group consisting ofmanganese and a rare-earth element satisfies a predetermined amount interms of a predetermined oxide, the predetermined amount of manganesecontained is 0.5 to 7.0 parts by mole in terms of MnO, and thepredetermined amount of the rare-earth element (RE) contained is 0.5 to5.0 parts by mole in terms of RE₂O₃, and the amount of at least oneamong titanium, hafnium, niobium, and molybdenum is 0.25 to 1.0 parts bymole in terms of a predetermined oxide (Samples Nos. 56 to 63), thesintering density is 7.20 g/cm³ or greater, the specific dielectricconstant is 130 or greater, and the specific resistance is 1.0×10¹² orgreater.

NUMERICAL REFERENCES

-   -   1 MULTILAYER CERAMIC CAPACITOR    -   10 ELEMENT BODY    -   2 DIELECTRIC LAYER    -   3 INNER ELECTRODE LAYER    -   4 OUTER ELECTRODE    -   11 THIN FILM CAPACITOR    -   111 SUBSTRATE    -   112 LOWER ELECTRODE    -   113 POLYCRYSTALLINE DIELECTRIC THIN FILM    -   114 UPPER ELECTRODE

What is claimed is:
 1. A dielectric composition, comprising: a main component expressed by {Ba_(x)Sr_((1-x))}_(m)Ta₄O₂; and a first subcomponent, wherein m satisfies a relationship of 1.95≤m≤2.40, the first subcomponent includes silicon and magnesium, the amount of silicon contained in the dielectric composition is 7.5 to 15.0 parts by mole in terms of SiO₂, and the amount of magnesium contained in the dielectric composition is 5.0 to 22.5 parts by mole in terms of MgO, provided that the amount of the main component contained in the dielectric composition is set to 100 parts by mole.
 2. The dielectric composition according to claim 1, wherein m satisfies a relationship of 2.10≤m≤2.40.
 3. The dielectric composition according to claim 1, further comprising: at least one selected from the group consisting of manganese and at least one of rare-earth elements as a second subcomponent, wherein the at least one selected from the group consisting of manganese and the at least one of rare-earth elements satisfies a predetermined amount in terms of a predetermined oxide in the dielectric composition, and wherein the predetermined amount of manganese contained in the dielectric composition is 0.5 to 7.0 parts by mole in terms of MnO, and/or the predetermined amount of the at least one of rare-earth elements expressed by RE and contained in the dielectric composition is 0.5 to 5.0 parts by mole in terms of RE₂O₃, provided that the amount of the main component contained in the dielectric composition is set to 100 parts by mole.
 4. The dielectric composition according to claim 1, further comprising: at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum as a third subcomponent, wherein the at least one selected from the group consisting of titanium, hafnium, niobium, and molybdenum is contained in the dielectric composition in an amount of 0.25 to 1.0 parts by mole in terms of a predetermined oxide, provided that the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of titanium is an amount in terms of TiO₂, the amount of hafnium is an amount in terms of HfO₂, the amount of niobium is an amount in terms of Nb₂O₅, and the amount of molybdenum is an amount in terms of MoO₃.
 5. An electronic component comprising: the dielectric composition according to claim
 1. 